Title:
振動デバイス、振動デバイスの製造方法、モーションセンサー、および電子機器
Document Type and Number:
Japanese Patent JP5682361
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a vibration device with stable electric characteristics in which damage of an active region of a semiconductor substrate caused by a laser beam used in tuning a vibration element may be suppressed.SOLUTION: In a sensor device 1, a silicon substrate 10 used as a semiconductor substrate has, on an active surface 10a thereof, an active region in which an integrated circuit including a semiconductor device is formed. In the sensor device 1 including a vibration gyro element 20 disposed above the silicon substrate 10, the active region is formed so as not to overlap, in a plan view, weight electrodes 41 working as mass adjusting parts provided on weight parts 28a and 28b disposed on sides of tips of driving vibration arms 25a and 25b of the vibration gyro element 20. Therefore, in performing frequency adjustment by irradiating the weight electrodes 41 with laser, the integrated circuit may be prevented from being damaged even when the laser reaches the active surface 10a.
Inventors:
奥村 洋一
菊池 尊行
千葉 誠一
小島 修司
菊池 尊行
千葉 誠一
小島 修司
Application Number:
JP2011031711A
Publication Date:
March 11, 2015
Filing Date:
February 17, 2011
Export Citation:
Assignee:
セイコーエプソン株式会社
International Classes:
G01C19/5628; H01L41/22; H01L41/311; H01L41/313
Attorney, Agent or Firm:
Masaaki Kamiyanagi
Osamu Suzawa
Kazuhiko Miyasaka
Osamu Suzawa
Kazuhiko Miyasaka
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