Title:
反転パターン形成方法及びポリシロキサン樹脂組成物
Document Type and Number:
Japanese Patent JP5696428
Kind Code:
B2
Abstract:
Provided are a polysiloxane resin composition for forming a reversed pattern, which can be satisfactorily embedded in a space of a mask pattern, said mask pattern being formed on a substrate to be processed, without being mixed with the mask pattern, and has good dry-etching resistance and high storage stability, and a method for forming a reversed pattern using said polysiloxane resin composition. The method for forming a reversed pattern, which comprises: a mask pattern-forming step (1) for forming a mask pattern on a substrate to be processed; an embedding step (2) for embedding a polysiloxane resin composition in a space of said mask pattern; and a reversed pattern-forming step (3) for removing said mask pattern and forming a reversed pattern, is characterized in that said polysiloxane resin composition comprises a polysiloxane [A] having a specific structure and an organic solvent [B] having a specific structure.
Inventors:
Kei Dei
Yoshitomo Yasuda
Koichi Hasegawa
Yoshitomo Yasuda
Koichi Hasegawa
Application Number:
JP2010240174A
Publication Date:
April 08, 2015
Filing Date:
October 26, 2010
Export Citation:
Assignee:
JSR CORPORATION
International Classes:
H01L21/027; C08G77/04; G03F7/40
Domestic Patent References:
| JP2003064305A | ||||
| JP2009251216A | ||||
| JP2009217250A | ||||
| JP2007019161A | ||||
| JP2004059737A | ||||
| JP2002235037A | ||||
| JP2002110510A |
Attorney, Agent or Firm:
Hajime Amano
Fujimoto Katsune
Yu Okutani
Yoshinori Ikeda
Hiroshi Ogawa
Sanae Kato
Koji Ishida
Keiko Morita
Fujimoto Katsune
Yu Okutani
Yoshinori Ikeda
Hiroshi Ogawa
Sanae Kato
Koji Ishida
Keiko Morita