Title:
半導体装置
Document Type and Number:
Japanese Patent JP5713116
Kind Code:
B2
Abstract:
A semiconductor device (30) disclosed herein includes an insulated gate (400, 421, 800), a main (400a,420a, 421a, 440, 800a) and a sub (410, 411, 412, 413, 414, 430, 431, 450, 810) trench conductors. The main and sub trench conductors are formed in the cell region (301a - 301d), and have a conductor that is covered with an insulation film and fills a trench extending in a first direction. The sub trench is located, with respect to the main trench conductor, in a second direction perpendicularly crossing the first direction and extending from the cell region side to the non-cell region. A length of the sub trench conductor in the first direction is shorter than a length of the insulated gate in the first direction. A distance between the main and sub trench conductors is shorter than a distance between the main trench conductor and the insulated gate. At least a part of the sub trench conductor reaches a position deeper than a boundary between the first and second semiconductor regions.
Inventors:
Yasuhiro Hirabayashi
Ken Senoo
Ken Senoo
Application Number:
JP2013545695A
Publication Date:
May 07, 2015
Filing Date:
November 22, 2011
Export Citation:
Assignee:
TOYOTA JIDOSHA KABUSHIKI KAISHA
International Classes:
H01L29/739; H01L21/336; H01L29/78
Domestic Patent References:
| JP2010267677A | ||||
| JP10214968A | ||||
| JP2002368221A | ||||
| JP2002373988A | ||||
| JP2003258253A |
Attorney, Agent or Firm:
Kaiyu International Patent Office