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Title:
イメージセンサ
Document Type and Number:
Japanese Patent JP5714804
Kind Code:
B2
Abstract:
An image sensor and a method of manufacturing the same are provided. The image sensor includes a substrate having a sensor array area and a peripheral circuit area a first insulating film structure formed on the peripheral circuit area and including a plurality of first multi-layer wiring lines and a second insulating film structure formed on the sensor array area and including a plurality of second multi-layer wiring lines. The uppermost-layer wiring line of the plurality of first multi-layer wiring lines is higher than that of the uppermost-layer wiring line of the plurality of second multi-layer wiring lines. The first insulating film structure includes an isotropic etch-stop layer, and the second insulating film structure does not include the isotropic etch-stop layer.

Inventors:
Hiroki Kin
Lee Tak
Roh Moo
Application Number:
JP2009030236A
Publication Date:
May 07, 2015
Filing Date:
February 12, 2009
Export Citation:
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Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
H01L27/146; H04N5/335; H04N5/369; H04N5/374
Domestic Patent References:
JP2000150846A
JP2007180541A
JP1032244A
Attorney, Agent or Firm:
Hatta International Patent Corporation



 
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