Title:
炭化珪素半導体装置およびその製造方法
Document Type and Number:
Japanese Patent JP5728992
Kind Code:
B2
Abstract:
A SiC device includes an inversion type MOSFET having: a substrate, a drift layer, and a base region stacked in this order; source and contact regions in upper portions of the base region; a trench penetrating the source and base regions; a gate electrode on a gate insulating film in the trench; a source electrode coupled with the source and base region; a drain electrode on a back of the substrate; and multiple deep layers in an upper portion of the drift layer deeper than the trench. Each deep layer has an impurity concentration distribution in a depth direction, and an inversion layer is provided in a portion of the deep layer on the side of the trench under application of the gate voltage.
Inventors:
Noboru Masato
Yamamoto Kensaku
Hideo Matsuki
Hidefumi Takatani
Masahiro Sugimoto
Shigemasa Soejima
Tsuyoshi Ishikawa
Yukihiko Watanabe
Yamamoto Kensaku
Hideo Matsuki
Hidefumi Takatani
Masahiro Sugimoto
Shigemasa Soejima
Tsuyoshi Ishikawa
Yukihiko Watanabe
Application Number:
JP2011027997A
Publication Date:
June 03, 2015
Filing Date:
February 11, 2011
Export Citation:
Assignee:
株式会社デンソー
トヨタ自動車株式会社
トヨタ自動車株式会社
International Classes:
H01L21/336; H01L29/12; H01L29/78
Domestic Patent References:
| JP2005019528A | ||||
| JP2007096138A | ||||
| JP2004200441A | ||||
| JP2009194065A |
Attorney, Agent or Firm:
Patent Business Corporation Yuai Patent Office