Title:
光吸収材料およびそれを用いた光電変換素子
Document Type and Number:
Japanese Patent JP5734276
Kind Code:
B2
Abstract:
A new light-absorbing material which can increase the conversion efficiency of a solar cell and a photoelectric conversion element using same are provided. The light-absorbing material of the present invention comprises a nitride-based compound semiconductor obtained by replacement of part of Al and/or Ga in a compound semiconductor expressed by a general formula Al 1-y Ga y N (0¤y¤1) by at least one kind of 3d-transition metals, the nitride-based compound semiconductor having one or more impurity bands between a valence band and a conduction band, and whose light absorption coefficient over an overall wavelength region of not longer than 1500 nm and not shorter than 300 being not lower than 1000 cm -1 .
Inventors:
Sonoda Saki
Junichi Kato
Osamu Kawasaki
Takenaga Mutsuo
Junichi Kato
Osamu Kawasaki
Takenaga Mutsuo
Application Number:
JP2012505724A
Publication Date:
June 17, 2015
Filing Date:
March 16, 2011
Export Citation:
Assignee:
Kyoto University of Technology
Sakai Chemical Industry Co., Ltd.
Sakai Chemical Industry Co., Ltd.
International Classes:
H01L31/0256; H01L31/075
Domestic Patent References:
| JPH1027923A | 1998-01-27 | |||
| JP2005183947A | 2005-07-07 | |||
| JP2002009341A | 2002-01-11 |
Attorney, Agent or Firm:
Patent Business Corporation Saegusa International Patent Office