Title:
低伝導電界制御素子を有する半導体デバイス
Document Type and Number:
Japanese Patent JP5735139
Kind Code:
B2
Abstract:
A semiconductor device including a low conducting field-controlling element is provided. The device can include a semiconductor including an active region, and a set of contacts to the active region. The field-controlling element can be coupled to one or more of the contacts in the set of contacts. The field-controlling element can be formed of a low conducting layer having a sheet resistance between approximately 103 Ohms per square and approximately 107 Ohms per square. During direct current and/or low frequency operation, the field-controlling element can behave similar to a metal electrode. However, during high frequency operation, the field-controlling element can behave similar to an insulator.
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Inventors:
Simin, Grigory
Surreal, michael
Gasca, Remigijasu
Surreal, michael
Gasca, Remigijasu
Application Number:
JP2013553667A
Publication Date:
June 17, 2015
Filing Date:
February 15, 2012
Export Citation:
Assignee:
Sensor Electronic Technology Incorporated
International Classes:
H01L21/338; H01L21/28; H01L29/06; H01L29/41; H01L29/778; H01L29/812
Domestic Patent References:
| JP2009253126A | ||||
| JP2007027284A | ||||
| JP2007048866A |
Foreign References:
| US20100156475 |
Attorney, Agent or Firm:
Takahashi Hayashi & Partners