Title:
ＣＭＯＳイメージセンサ画素読み出し回路構造および画素構造
Document Type and Number:
Japanese Patent JP5735141
Kind Code:
B2
Abstract:
A Complementary Metal-Oxide-Semiconductor (CMOS) image sensor pixel readout circuit structure and a pixel structure are provided. The readout circuit structure includes an adjustable gain amplifier comprising an operational amplifier, a first capacitor, a switch and a second capacitor, wherein one input transistor of the operational amplifier is the readout transistor of a CMOS image sensor pixel unit. The sensitivity, the signal to noise ratio and the dynamic range can be improved, the image quality will not be affected during image transmission, and the adjustable gain can be achieved.
Inventors:
Hiki Akira
Lee Biao
Chen Jie
Liu Shihe
Karato
Lee Biao
Chen Jie
Liu Shihe
Karato
Application Number:
JP2013554777A
Publication Date:
June 17, 2015
Filing Date:
March 30, 2011
Export Citation:
Assignee:
BEIJING SUPERPIX MICRO TECHNOLOGY CO.,LTD.
International Classes:
H04N5/3745; H04N5/374
Domestic Patent References:
| JP2006311348A |
Foreign References:
| US5917547 |
Attorney, Agent or Firm:
Hiroe Associates Patent Office