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Title:
マイクロ波アシスト磁気記録構造、磁気ランダムアクセスメモリ構造、ハードバイアス構造、垂直磁気媒体および磁気デバイスの製造方法
Document Type and Number:
Japanese Patent JP5735859
Kind Code:
B2
Abstract:
Perpendicular magnetic anisotropy and Hc are enhanced in magnetic devices with a Ta/M1/M2 seed layer where M1 is preferably Ti, and M2 is preferably Cu, and including an overlying (Co/Ni)X multilayer (x is 5 to 50) that is deposited with ultra high Ar pressure of >100 sccm to minimize impinging energy that could damage (Co/Ni)X interfaces. In one embodiment, the seed layer is subjected to one or both of a low power plasma treatment and natural oxidation process to form a more uniform interface with the (Co/Ni)X multilayer. Furthermore, an oxygen surfactant layer may be formed at one or more interfaces between adjoining (Co/Ni)X layers in the multilayer stack. Annealing at temperatures between 180° C. and 400° C. also increases Hc but the upper limit depends on whether the magnetic device is MAMR, MRAM, a hard bias structure, or a perpendicular magnetic medium.

Inventors:
Zhang Ryo
Lee Min
Zhou Utatsu
Application Number:
JP2011120559A
Publication Date:
June 17, 2015
Filing Date:
May 30, 2011
Export Citation:
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Assignee:
Headway Technologies, Inc.
International Classes:
H01L43/08; H01L21/8246; H01L27/105; H01L29/82; H01L43/10; H01L43/12
Domestic Patent References:
JP2009301695A
JP2004158856A
JP2008097685A
JP2006332174A
JP2023678A
JP5315135A
JP2008300840A
JP2005260226A
JP9091630A
JP2009004784A
JP2009059461A
JP2005536818A
Foreign References:
US20090257151
Other References:
W. CHEN, 外4名,Spin-torque driven ferromagnetic resonance of Co/Ni synthetic layers in spin valves,Applied Physics Letters,2008年 1月 4日,Vol. 92,p. 012507-1~012507-3
Randall LAW, 外3名,Effects of Ta seed layer and annealing on magnetoresistance in CoFe/Pd-based pseudo-spin-valves with,Applied Physics Letters,2007年12月12日,Vol. 91,p. 242504-1~242504-3
S. MANGIN, 外5名,Current-induced magnetization reversal in nanopillars with perpenducular anisotropy,Nature Materials,2006年 2月19日,Vol. 5,p. 210~215
Attorney, Agent or Firm:
Yasushi Santanzaki
Yoichiro Fujishima
Patent Business Corporation Tsubasa International Patent Office