Title:
有機デュアルゲートメモリおよびその製造方法
Document Type and Number:
Japanese Patent JP5738868
Kind Code:
B2
Abstract:
The organic memory device is a double-gate transistor that successively comprises a first gate electrode, a first gate dielectric, an organic semi-conductor material, a second gate dielectric and a second gate electrode. Source and drain electrodes are arranged in the organic semiconductor material and define an inter-electrode surface. A trapping area is arranged between the organic semiconductor material and one of the gate electrodes and is in electric contact with one of the gate electrodes or the organic semi-conductor material. The trapping area is at least facing the inter-electrode surface.
Inventors:
Roman, Gloweziki
Mohammed, Ben Wadi
Philip, Coronel
Stephanie, Jacob
Mohammed, Ben Wadi
Philip, Coronel
Stephanie, Jacob
Application Number:
JP2012532641A
Publication Date:
June 24, 2015
Filing Date:
September 30, 2010
Export Citation:
Assignee:
Comisaria Allenergy Atomic Eo Energy Alternative
International Classes:
H01L27/28; H01L21/336; H01L21/8246; H01L27/105; H01L29/786; H01L29/788; H01L29/792; H01L51/00; H01L51/05; H01L51/30
Domestic Patent References:
| JP2004047977A | ||||
| JP2008182088A | ||||
| JP9097851A | ||||
| JP2010087519A |
Foreign References:
| US6335539 | ||||
| US20090101962 |
Attorney, Agent or Firm:
Hirohito Katsunuma
Yasukazu Sato
Yasushi Kawasaki
Takeshi Sekine
Akaoka Akira
Takayuki Shigeno
Yasukazu Sato
Yasushi Kawasaki
Takeshi Sekine
Akaoka Akira
Takayuki Shigeno