Title:
化合物半導体装置及びその製造方法
Document Type and Number:
Japanese Patent JP5741042
Kind Code:
B2
Abstract:
A compound semiconductor device including: a substrate; an electron transit layer formed on and above the substrate; and an electron supply layer formed on and above the electron transit layer, wherein a first region or regions having a smaller thermal expansion coefficient than the electron transit layer and a second region or regions having a larger thermal expansion coefficient than the electron transit layer are mixedly present on a surface of the substrate.
Inventors:
Sanae Shimizu
Atsushi Yamada
Atsushi Yamada
Application Number:
JP2011029093A
Publication Date:
July 01, 2015
Filing Date:
February 14, 2011
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L21/338; H01L21/205; H01L29/778; H01L29/812
Domestic Patent References:
| JP2009292718A | ||||
| JP2011003652A | ||||
| JP2003086520A | ||||
| JP2005191286A | ||||
| JP2009231561A | ||||
| JP2002343728A | ||||
| JP2002284600A |
Attorney, Agent or Firm:
Takayoshi Kokubun