Title:
窒化物半導体を用いたトランジスタおよびその製造方法
Document Type and Number:
Japanese Patent JP5744346
Kind Code:
B2
Abstract:
A portion of an AlN spacer layer of a high electron mobility transistor (GaN HEMT) having a nitride semiconductor used therein is removed only in a region directly below a gate electrode and in a vicinity of the region, and a length of a portion where the AlN spacer layer is not present is sufficiently smaller than a distance between a source electrode and a drain electrode.
Inventors:
Yutaro Yamaguchi
Toshiyuki Oishi
Hiroshi Otsuka
Koji Yamanaka
Toshiyuki Oishi
Hiroshi Otsuka
Koji Yamanaka
Application Number:
JP2014552768A
Publication Date:
July 08, 2015
Filing Date:
December 17, 2012
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
| JP2008306130A | ||||
| JP200999691A | ||||
| JP2009152349A |
Attorney, Agent or Firm:
Hideaki Tazawa
Hamada Hatsune
Nakashima Shigeru
Hideo Kawamura
Tatsuya Sakamoto
Tsujioka Masaaki
Hamada Hatsune
Nakashima Shigeru
Hideo Kawamura
Tatsuya Sakamoto
Tsujioka Masaaki