Title:
ＩＩＩ族窒化物半導体結晶の製造方法
Document Type and Number:
Japanese Patent JP5754391
Kind Code:
B2
Inventors:
Kumegawa Shohei
Moriyama Miki
Shiro Yamasaki
Seiji Nagai
Moriyama Miki
Shiro Yamasaki
Seiji Nagai
Application Number:
JP2012025478A
Publication Date:
July 29, 2015
Filing Date:
February 08, 2012
Export Citation:
Assignee:
Toyoda Gosei Co., Ltd.
International Classes:
C30B29/38; C30B19/12
Domestic Patent References:
| JP2005225681A | ||||
| JP2010171273A | ||||
| JP2006509710A |
Foreign References:
| US20060054075 | ||||
| WO2008059901A1 |
Attorney, Agent or Firm:
Osamu Fujitani