半導体装置 - Toshiba Corporation

Title:

半導体装置

Document Type and Number:

Japanese Patent JP5760134

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To reduce parasitic inductance.SOLUTION: A semiconductor device includes a substrate, a first circuit section, and a second circuit section. The first circuit section has a first switching element and a second switching element. The second circuit section has a third switching element and a fourth switching element. The first switching element is provided in parallel with one of the second switching element and the third switching element in a first direction along the substrate, and is provided in parallel with the fourth switching element in a second direction crossing the first direction along the substrate. The other of the second switching element and the third switching element is provided in parallel with the fourth switching element in the first direction, and is provided in parallel with one of the second switching element and the third switching element in the second direction.

More Like This:

JP3799792	SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
JPS5717158	MANUFACTURE OF SEMICONDUCTOR DEVICE
JP2012209545	MANUFACTURING METHOD OF SEMICONDUCTOR LAMINATE

Inventors:

Kazuto Takao
Hiroshi Kono
Takuo Kikuchi

Application Number:

JP2014210064A

Publication Date:

August 05, 2015

Filing Date:

October 14, 2014

Export Citation:

Click for automatic bibliography generation Help