Title:
液晶表示装置
Document Type and Number:
Japanese Patent JP5766329
Kind Code:
B2
Abstract:
To provide a display device including a protection circuit having a thin film transistor which has small size and high withstand voltage. In the protection circuit of the display device, a thin film transistor is used in which an amorphous semiconductor layer, a microcrystalline semiconductor layer, a gate insulating layer which is in contact with the microcrystalline semiconductor layer, and a gate electrode layer overlap with each other. Since current drive capability of the microcrystalline semiconductor layer is high, the size of the transistor can be made small. In addition, the amorphous semiconductor layer is included, so that the withstand voltage can be improved. Here, the display device is a liquid crystal display device or a light-emitting device.
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Inventors:
Yoshimoto Kurokawa
Takayuki Ikeda
Takayuki Ikeda
Application Number:
JP2014089375A
Publication Date:
August 19, 2015
Filing Date:
April 23, 2014
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G02F1/1368; G02F1/1343; H01L21/822; H01L27/04; H01L29/786; H01L51/50; H05B33/14
Domestic Patent References:
| JP2006018287A | ||||
| JP2006350288A | ||||
| JP2007047797A | ||||
| JP2007047615A | ||||
| JP2004078157A |