Title:
薄膜トランジスタ
Document Type and Number:
Japanese Patent JP5767015
Kind Code:
B2
Abstract:
A thin film transistor including an active layer, and has a field-effect mobility of 25 cm2/Vs or more, the active layer being formed of an oxide that includes In, Ga, and Zn in an atomic ratio that falls within the following region 1, region 2, or region 3, the region 1 being defined by 0.58≰In/(In+Ga+Zn)≰0.68 and 0.15
Inventors:
Masayuki Itose
Nishimura Asami
Hirokazu Kawashima
Misa Sunagawa
Masashi Kasami
Yano official rule
Nishimura Asami
Hirokazu Kawashima
Misa Sunagawa
Masashi Kasami
Yano official rule
Application Number:
JP2011105721A
Publication Date:
August 19, 2015
Filing Date:
May 10, 2011
Export Citation:
Assignee:
IDEMITSU KOSAN CO.,LTD.
International Classes:
H01L29/786; C04B35/00; C23C14/34; H01L21/336; H01L21/363
Domestic Patent References:
| JP2009253204A |
Foreign References:
| WO2010070832A1 |
Attorney, Agent or Firm:
Kihei Watanabe