Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP5780938
Kind Code:
B2
Abstract:
According to an embodiment, a method for manufacturing a semiconductor device includes a placement step and a bonding step. The placement step faces a semiconductor active portion toward a support substrate portion via a bonding portion disposed between the semiconductor active portion and the support substrate portion. The bonding portion includes a bonding layer and a light absorption layer, absorptance of the light absorption layer for laser light being higher than or equal to absorptance of the bonding layer for the laser light. The bonding step bonds the semiconductor active portion and the support substrate portion by irradiating the light absorption layer with the laser light through the support substrate portion and melting the bonding layer by thermal conduction from the light absorption layer heated by the laser light.
Inventors:
Satoshi Miki
Toshiyuki Oka
Shinya Nunogami
Hiroshi Katsuno
Toshiyuki Oka
Shinya Nunogami
Hiroshi Katsuno
Application Number:
JP2011272084A
Publication Date:
September 16, 2015
Filing Date:
December 13, 2011
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L33/00; H01L21/02; H01L21/52; H01L23/14; H01L27/12
Domestic Patent References:
| JP2010092897A | ||||
| JP2002368282A | ||||
| JP2011137918A | ||||
| JP2011142231A | ||||
| JP2009277852A | ||||
| JP2009004487A |
Attorney, Agent or Firm:
Masahiko Hinataji