Title:
半導体装置の作製方法
Document Type and Number:
Japanese Patent JP5788066
Kind Code:
B2
Abstract:
The driver circuit includes an inverter circuit having a first thin film transistor including a first oxide semiconductor film and a second transistor including a second oxide semiconductor film. The first thin film transistor and the second thin film transistor are enhancement transistors, in which a silicon oxide film including an OH group is provided on and in contact with the first oxide semiconductor film and the second oxide semiconductor film, and a silicon nitride film is provided on and in contact with the silicon oxide film.
Inventors:
Jun Koyama
Shunpei Yamazaki
Shunpei Yamazaki
Application Number:
JP2014145936A
Publication Date:
September 30, 2015
Filing Date:
July 16, 2014
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/336; G09F9/00; H01L21/28; H01L29/786; H01L51/50; H05B33/14
Domestic Patent References:
| JP2008042088A | ||||
| JP2007123861A | ||||
| JP2001223363A | ||||
| JP9148429A | ||||
| JP2009260002A |
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