半導体装置および半導体装置の製造方法

Japanese Patent JP5788350

B2

A semiconductor device includes an interlayer insulating film containing Si, O, C, and H, an under-bump metal film disposed over the interlayer insulating film and containing Ni, and a bump electrode disposed over the under-bump metal film. In the interlayer insulating film, a ratio of a peak height of Si—CH3 near a wave number 1270 cm−1 to a peak height of Si—O near a wave number 1030 cm−1 obtained by Fourier-transform infrared spectroscopy (FTIR) is 0.15 or greater and 0.27 or less. A ratio of a peak height of Si—CH2—Si near a wave number 1360 cm−1 to the peak height of Si—CH3 near the wave number 1270 cm−1 is 0.031 or greater.

JPH08335579	SILICON-BASED OXIDE FILM CONTAINING FLUORINE AND ITS PREPARATION
JPS5844723	MANUFACTURE OF SEMICONDUCTOR DEVICE
JP6202701	A manufacturing method and a program of a substrate processing device and a semiconductor device

Tatsuya Usami
Nakamura solstice
Naoki Fujimoto

JP2012066739A

September 30, 2015

March 23, 2012

Click for automatic bibliography generation  

Renesas Electronics Corporation

H01L21/316; H01L21/3205; H01L21/60; H01L21/768; H01L23/522

JP2004253791A
JP2006135213A
JP2011003586A
JP2008078621A
JP2009177023A
JP2013520030A
JP2006216541A
JP2005175085A
JP2004031918A
JP2009302340A
JP2005044976A

US20090200675
WO2005108469A1
WO2011103282A1
US20120032311
US20050194619
WO2010090038A1
US20050006665

Shinji Hayami
Satoshi Amagi

Previous Patent: めっき処理装置、めっき処理方法および記憶媒体

Next Patent: METHOD AND DEVICE FOR INSPECTION OF PATTERN OF PRINTED WIRING BOARD