Title:
半導体製造に使用される噴射部材、それを有するプラズマ処理装置、および半導体装置の製造方法
Document Type and Number:
Japanese Patent JP5788992
Kind Code:
B2
Abstract:
A plasma processing apparatus may include a process chamber configured to perform a plasma using process and contain a plurality of substrates, a support member provided in the process chamber, the substrates being laid on the same level of the support member, an injection member provided to face the support member and include a plurality of baffles, such that at least one reaction gas and a purge gas can be injected onto the substrates in an independent manner, and a driving part configured to rotate the support member or the injection member, such that the baffles of the injection member can orbit with respect to the plurality of the substrates laid on the support member. The injection member may include a plasma generator, which may be provided on at least one, configured to inject the reaction gas, of the baffles to turn the reaction gas into plasma.
Inventors:
Park, Young Seung
Lee Seung Wan
Kim, Dong Eu
Toyoda and his group
Osamu Kasahara
Tetsuaki Inada
Lee Seung Wan
Kim, Dong Eu
Toyoda and his group
Osamu Kasahara
Tetsuaki Inada
Application Number:
JP2013546047A
Publication Date:
October 07, 2015
Filing Date:
January 12, 2012
Export Citation:
Assignee:
Cooke Electric Korea Company Limited
Hitachi Kokusai Electric Co., Ltd.
Hitachi Kokusai Electric Co., Ltd.
International Classes:
H01L21/205; C23C16/509; H05H1/46
Domestic Patent References:
| JP2009084693A | ||||
| JP7045542A | ||||
| JP2009260199A |
Attorney, Agent or Firm:
Hatta International Patent Corporation