Title:
単結晶炭化ケイ素液相エピタキシャル成長用シード材及び単結晶炭化ケイ素の液相エピタキシャル成長方法
Document Type and Number:
Japanese Patent JP5793813
Kind Code:
B2
Inventors:
Tori Satoshi
Akira Nogami
Matsumoto
Akira Nogami
Matsumoto
Application Number:
JP2010288467A
Publication Date:
October 14, 2015
Filing Date:
December 24, 2010
Export Citation:
Assignee:
Toyo Tanso Co., Ltd.
International Classes:
C30B29/36; C30B19/12; H01L21/208
Domestic Patent References:
| JP2008230946A | ||||
| JP10324599A | ||||
| JP2008037684A | ||||
| JP2000044398A | ||||
| JP4055397A | ||||
| JP2000160343A | ||||
| JP2001107239A |
Other References:
S. R. NISHITANI et al.,Metastable solvent epitaxy of SiC,Journal of Crystal Growth,2008年,Vol. 310,p. 1815-1818
A. J. STECKL et al.,Characterization of 3C-SiC crystals grown by thermal decomposition of methyltrichlorosilane,Applied Physics Letters,1996年12月16日,Vol. 69, No. 25,p. 3824-3826
A. J. STECKL et al.,Characterization of 3C-SiC crystals grown by thermal decomposition of methyltrichlorosilane,Applied Physics Letters,1996年12月16日,Vol. 69, No. 25,p. 3824-3826
Attorney, Agent or Firm:
Table of contents Makoto
宮▲崎▼ 主税
Kazutoshi Nakayama
宮▲崎▼ 主税
Kazutoshi Nakayama
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