Title:
ナノメーター標準原器及びナノメーター標準原器の製造方法
Document Type and Number:
Japanese Patent JP5794648
Kind Code:
B2
Abstract:
A standard sample (72) that is a nanometer standard prototype has a standard length that serves as a length reference. The standard sample (72) includes a SiC layer in which a step-terrace structure is formed. The height of a step is equal to the height of a full unit that corresponds to one periodic of a stack of SiC molecules in a stack direction or equal to the height of a half unit that corresponds to one-half periodic of the stack of SiC molecules in the stack direction. The height of the step is used as the standard length. In a microscope such as an STM that is to be measured in a high-temperature vacuum environment, performing heating in a vacuum furnace provided in the STM enables a surface reconstruction to occur while removing a natural oxide film from the surface. The surface reconstruction has an ordered atomic arrangement. Therefore, the accuracy of the height of the step is not degraded. Accordingly, a standard sample usable under a high-temperature vacuum is achieved.
Inventors:
Tadaaki Kaneko
Masashi Ushio
Masashi Ushio
Application Number:
JP2013542694A
Publication Date:
October 14, 2015
Filing Date:
November 11, 2011
Export Citation:
Assignee:
School corporation Kansai Gakuin
International Classes:
G01N1/00; G01B21/30; G01Q40/02
Domestic Patent References:
| JP6058753A | ||||
| JP2011016703A | ||||
| JP2008016691A | ||||
| JP2006040999A | ||||
| JP2008230944A | ||||
| JP2006284316A | ||||
| JP2006327876A |
Foreign References:
| WO2011024854A1 |
Other References:
佐野泰久, 原英之, 有馬健太, 山内和人,原子レベルで平坦な表面の創成技術,トライボロジスト,日本,2010年 3月15日,Vol.55 No.3,Page.148-153
牛尾昌史、吉井新、玉井尚登、大谷昇、金子忠昭,4H-SiC(000-1)C面上エピタキシャル・多層グラフェン成長におけるリッジ構造の温度依存性,応用物理学会学術講演会「講演予稿集」,日本,2010年 8月30日,第71回,16a-ZM-3
松波弘之,シリコンカーバイド(SiC)研究の進展,FEDレビュー,日本,2002年 4月,Vol.1,No.17,1-7
吉井新、牛尾昌史、久津間保徳、大谷昇、金子忠昭、玉井尚登,4H-SiC(0001)表面ステップ密度に依存したグラフェン成長のラマン評価,応用物理学会関係連合講演会「講演予稿集」,日本,2011年 3月 9日,第58回,26p-BM-12
牛尾昌史、吉井新、玉井尚登、大谷昇、金子忠昭,4H-SiC(000-1)C面上エピタキシャル・多層グラフェン成長におけるリッジ構造の温度依存性,応用物理学会学術講演会「講演予稿集」,日本,2010年 8月30日,第71回,16a-ZM-3
松波弘之,シリコンカーバイド(SiC)研究の進展,FEDレビュー,日本,2002年 4月,Vol.1,No.17,1-7
吉井新、牛尾昌史、久津間保徳、大谷昇、金子忠昭、玉井尚登,4H-SiC(0001)表面ステップ密度に依存したグラフェン成長のラマン評価,応用物理学会関係連合講演会「講演予稿集」,日本,2011年 3月 9日,第58回,26p-BM-12
Attorney, Agent or Firm:
Naomi Katsura River
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