Title:
半導体素子の製造方法
Document Type and Number:
Japanese Patent JP5799458
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that uses a substrate in which at least a surface thereof is composed of a SiC layer and having an off-angle, and in which step bunching occurring when ions are activated can be removed.SOLUTION: A method of manufacturing a semiconductor device comprises an ion injection step, a carbon layer formation step, an ion activation step, and a removal step. In the ion injection step, ions are injected into a substrate. In the carbon layer formation step, a carbon layer is formed on a surface of the substrate into which the ions are injected in the ion injection step. In the ion activation step, the ions are activated by heating the substrate on which the carbon layer is formed. In the removal step, the carbon layer and step bunching, which occurs on the surface of the substrate in the ion activation step, are removed by heating the substrate on which the ion activation step is performed under a Si vapor pressure.
Inventors:
Tadaaki Kaneko
Noboru Otani
Masashi Ushio
Ayumu Adachi
Noboru Otani
Masashi Ushio
Ayumu Adachi
Application Number:
JP2011073623A
Publication Date:
October 28, 2015
Filing Date:
March 29, 2011
Export Citation:
Assignee:
School corporation Kansai Gakuin
TOYOTA JIDOSHA KABUSHIKI KAISHA
TOYOTA JIDOSHA KABUSHIKI KAISHA
International Classes:
H01L21/265; H01L21/20
Domestic Patent References:
| JP2010135552A | ||||
| JP2001068428A | ||||
| JP2008016691A | ||||
| JP2007115875A | ||||
| JP2010265126A |
Foreign References:
| WO2005076327A1 |
Attorney, Agent or Firm:
Naomi Katsura River