Title:
半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法
Document Type and Number:
Japanese Patent JP5799936
Kind Code:
B2
Abstract:
The method of producing a semiconductor epitaxial wafer includes a first step of irradiating a surface portion 10A of a semiconductor wafer 10 with cluster ions 16 thereby forming a modifying layer 18 formed from carbon and a dopant element contained as a solid solution that are constituent elements of the cluster ions 16, in the surface portion 10A of the semiconductor wafer; and a second step of forming an epitaxial layer 20 on the modifying layer 18 of the semiconductor wafer, the epitaxial layer 20 having a dopant element concentration lower than the peak concentration of the dopant element in the modifying layer 18.
Inventors:
Takeshi Kadono
Kazunari Kurita
Kazunari Kurita
Application Number:
JP2012249731A
Publication Date:
October 28, 2015
Filing Date:
November 13, 2012
Export Citation:
Assignee:
Sumco inc.
International Classes:
H01L21/322; H01L21/20; H01L27/146
Domestic Patent References:
| JP2010040864A | ||||
| JP2012059849A | ||||
| JP2009540531A | ||||
| JP2001139399A | ||||
| JP2011151318A | ||||
| JP2011253983A | ||||
| JP2009518869A | ||||
| JP6338507A |
Attorney, Agent or Firm:
Kenji Sugimura
Keisuke Kawahara
Keisuke Kawahara
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