Title:
量子カスケード半導体レーザ、レーザ装置および量子カスケード半導体レーザの製造方法
Document Type and Number:
Japanese Patent JP5810720
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To inhibit a solder material from rising up on a side surface.SOLUTION: A quantum cascade semiconductor laser 1 includes: a semiconductor layer 20 including a lower clad layer 11, a core layer 13, and an upper clad layer 15; an insulation layer 41 provided on a main surface 16a of the semiconductor layer 20; and an upper electrode E1 connecting with the main surface 16a through an opening 41a of the insulation layer 41. The semiconductor layer 20 is formed by a first region 20a, a second region 20b, and a third region 20c, which are sequentially disposed along one direction perpendicular to a normal axis NV. Solder seal-in grooves 32 are respectively provided along the other direction perpendicular to the normal axis NV and the one direction at the first region 20a and the third region 20c. The insulation layer 41 is provided on the main surface 16a and the solder seal-in grooves 32, and the first region 20a and the third region 20c are located at positions lower than the second region 20b.
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Inventors:
Junichi Hashimoto
Application Number:
JP2011168686A
Publication Date:
November 11, 2015
Filing Date:
August 01, 2011
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
H01S5/022; H01S5/34
Domestic Patent References:
| JP2002158404A | ||||
| JP6260723A | ||||
| JP2001185800A | ||||
| JP2006203054A | ||||
| JP8279647A | ||||
| JP64024871U | ||||
| JP8172238A | ||||
| JP2010098001A | ||||
| JP2010098002A |
Foreign References:
| WO2011021417A1 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Ichira Kondo
Yoshiki Kuroki
Ichira Kondo