Title:
プラズマ処理方法及びゲートラスト方式のメタルゲートの製造方法
Document Type and Number:
Japanese Patent JP5814663
Kind Code:
B2
Abstract:
The present invention provides a dry etching method capable of readily providing rounded top edge portions, called top rounds, at trenches and vias formed by removal of a dummy material. The method of the present invention is a dry etching method for forming trenches or vias by removing a dummy material with its periphery surrounded by an interlayer oxide film, which method includes the steps of etching the dummy material to a predetermined depth, performing isotropic etching after the dummy material etching, and removing remaining part of the dummy material after the isotropic etching.
Inventors:
Ichimaru Tomosho
Kenichi Kuwahara
Go Saito
Kenichi Kuwahara
Go Saito
Application Number:
JP2011154408A
Publication Date:
November 17, 2015
Filing Date:
July 13, 2011
Export Citation:
Assignee:
Hitachi High-Technologies Corporation
International Classes:
H01L21/3065; H01L21/28; H01L21/768
Domestic Patent References:
| JP2007134432A | ||||
| JP2006066408A | ||||
| JP2008311613A | ||||
| JP2005142265A | ||||
| JP2000315789A |
Attorney, Agent or Firm:
Manabu Inoue
Yuji Toda
Shigemi Iwasaki
Yuji Toda
Shigemi Iwasaki