Title:
ケイ素含有レジスト下層膜の製膜方法
Document Type and Number:
Japanese Patent JP5815477
Kind Code:
B2
Abstract:
The invention provides a method for forming a silicon-containing resist underlayer film, the method for coating and forming a silicon-containing resist underlayer film by spin coating method comprising: feeding an aqueous alkaline solution in a pipe of an apparatus for coating and forming a film by spin coating method to clean therein; supplying a silicon-containing resist underlayer film composition via the pipe; and coating the silicon-containing resist underlayer film on a substrate to form a film. There can be provided a method for forming a silicon-containing resist underlayer film capable of reducing coating defects after forming a film by cleaning and removing a precipitate derived from silicon-containing resist underlayer film composition that precipitates and adheres in a pipe of an apparatus for coating and forming a film.
Inventors:
Takao Yoshihara
Tsutomu Ogiwara
Motoaki Iwabuchi
Tsutomu Ogiwara
Motoaki Iwabuchi
Application Number:
JP2012133993A
Publication Date:
November 17, 2015
Filing Date:
June 13, 2012
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
H01L21/027; B05D1/40; B05D7/24; G03F7/11; G03F7/16
Domestic Patent References:
| JP2007302873A | ||||
| JP2005290503A | ||||
| JP2009019093A | ||||
| JP2008036491A | ||||
| JP2013041140A |
Foreign References:
| US6170494 | ||||
| WO2012043403A1 |
Attorney, Agent or Firm:
Mikio Yoshimiya