Title:
プラズマ処理チャンバ、プラズマ処理チャンバの部品及びその製造方法
Document Type and Number:
Japanese Patent JP5815703
Kind Code:
B2
Abstract:
Parasitic plasma in voids in a component of a plasma processing chamber can be eliminated by covering electrically conductive surfaces in an interior of the voids with a sleeve. The voids can be gas holes, lift pin holes, helium passages, conduits and/or plenums in chamber components such as an upper electrode and a substrate support.
Inventors:
Rich anthony
Thorabu Ural
Martinez Rally
Thorabu Ural
Martinez Rally
Application Number:
JP2013521760A
Publication Date:
November 17, 2015
Filing Date:
July 18, 2011
Export Citation:
Assignee:
LAM RESEARCH CORPORATION
International Classes:
H05H1/46; C23C16/44; C23C16/50; H01L21/3065; H01L21/31
Foreign References:
| WO2009063950A1 | ||||
| US20090151636 | ||||
| US20090022905 | ||||
| US20070264443 | ||||
| US20070204958 |
Attorney, Agent or Firm:
Meisei International Patent Office
Takao Igarashi
Takao Igarashi