Title:
３次元半導体装置
Document Type and Number:
Japanese Patent JP5832114
Kind Code:
B2
Abstract:
Three-dimensional semiconductor memory devices and methods of fabricating the same. The three-dimensional semiconductor devices include an electrode structure with sequentially-stacked electrodes disposed on a substrate, semiconductor patterns penetrating the electrode structure, and memory elements including a first pattern and a second pattern interposed between the semiconductor patterns and the electrode structure, the first pattern vertically extending to cross the electrodes and the second pattern horizontally extending to cross the semiconductor patterns.
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Inventors:
Somitsu Soo
Park
Yellow gogi
Cui Hamme
Liu Dong Sat
Xu-star
Yellow planting
Nakanishi Toshiro
Park Min
Lee Pil
Park
Yellow gogi
Cui Hamme
Liu Dong Sat
Xu-star
Yellow planting
Nakanishi Toshiro
Park Min
Lee Pil
Application Number:
JP2011071053A
Publication Date:
December 16, 2015
Filing Date:
March 28, 2011
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
H01L21/8247; H01L21/336; H01L27/115; H01L29/788; H01L29/792
Domestic Patent References:
| JP2009117843A | ||||
| JP2010182947A | ||||
| JP2009146954A | ||||
| JP2009224465A | ||||
| JP2009027134A | ||||
| JP2010056533A |
Foreign References:
| US20090242966 |
Attorney, Agent or Firm:
Kyosei International Patent Office