Title:
圧電デバイス、および、圧電デバイスの製造方法
Document Type and Number:
Japanese Patent JP5835329
Kind Code:
B2
Abstract:
It is possible to realize a piezoelectric device capable of avoiding occurrence of defects due to pyroelectric charge without limitations on the types of device in which the piezoelectric device can be used. A metal layer is formed on the bonding surface of a piezoelectric single crystal substrate (S121). Furthermore, a metal layer is formed on the bonding surface of a support substrate (S122). The metal layers are overlaid on each other to form a metal bonded layer (S123). Subsequently, by oxidizing the metal bonded layer, a semi-conducting layer is formed (S126).
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Inventors:
Takashi Iwamoto
Application Number:
JP2013526837A
Publication Date:
December 24, 2015
Filing Date:
July 25, 2012
Export Citation:
Assignee:
MURATA MANUFACTURING CO.,LTD.
International Classes:
H03H9/25; H03H3/08; H03H9/145
Domestic Patent References:
| JP2006245990A | ||||
| JP6232677A | ||||
| JP63294009A | ||||
| JP2003347612A | ||||
| JP2004282231A |
Foreign References:
| WO2009081651A1 | ||||
| WO2011004665A1 | ||||
| WO2011052551A1 | ||||
| WO2011065317A1 |
Attorney, Agent or Firm:
Kaede International Patent Office