Title:
半導体装置の作製方法
Document Type and Number:
Japanese Patent JP5844993
Kind Code:
B2
Abstract:
Disclosed is a semiconductor device using an oxide semiconductor, with stable electric characteristics and high reliability. In a process for manufacturing a bottom-gate transistor including an oxide semiconductor film, dehydration or dehydrogenation is performed by heat treatment and oxygen doping treatment is performed. The transistor including a gate insulating film subjected to the oxygen doping treatment and the oxide semiconductor film subjected to the dehydration or dehydrogenation by the heat treatment is a transistor having high reliability in which the amount of change in threshold voltage of the transistor by the bias-temperature stress (BT) test can be reduced.
Inventors:
Shunpei Yamazaki
Application Number:
JP2011094985A
Publication Date:
January 20, 2016
Filing Date:
April 21, 2011
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/336; G02F1/1368; G02F1/17; H01L21/283; H01L29/786; H01L51/50; H05B33/14
Domestic Patent References:
| JP2010080947A | ||||
| JP2010062229A | ||||
| JP2010016163A | ||||
| JP2010062549A | ||||
| JP2007201366A | ||||
| JP2010021520A | ||||
| JP2009224737A |
Foreign References:
| WO2010002608A1 |
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