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Patent Searching and Data


Title:
シリコン単結晶育成方法
Document Type and Number:
Japanese Patent JP5849878
Kind Code:
B2
Inventors:
Ryoji Hoshi
Masaru Sonokawa
Matsumoto Katsu
Hozumi Hideyoshi
Application Number:
JP2012158438A
Publication Date:
February 03, 2016
Filing Date:
July 17, 2012
Export Citation:
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Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
C30B29/06; C30B15/04
Domestic Patent References:
JP2004315336A
JP2012031023A
JP2003068744A
JP2002226295A
JP2009249233A
Foreign References:
WO2000055397A1
Attorney, Agent or Firm:
Mikio Yoshimiya