Title:
パターン平滑化及びインライン限界寸法のスリム化のための蒸気処理プロセス
Document Type and Number:
Japanese Patent JP5851052
Kind Code:
B2
Abstract:
A method for patterning a substrate is described. The method includes forming a layer of radiation-sensitive material on a substrate, and preparing a pattern in the layer of radiation-sensitive material using a lithographic process, wherein the pattern is characterized by a critical dimension (CD) and a roughness. Following the preparation of the pattern in the layer of radiation-sensitive material, the method further includes performing a CD slimming process to reduce the CD to a reduced CD, and performing a vapor smoothing process to reduce the roughness to a reduced roughness.
Inventors:
Dan, Shannon, W
Hetzer, Dave
Hetzer, Dave
Application Number:
JP2014551251A
Publication Date:
February 03, 2016
Filing Date:
December 12, 2012
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/027; G03F7/40
Domestic Patent References:
| JP2005019969A | ||||
| JP2009147261A | ||||
| JP2010267880A | ||||
| JP2009230106A | ||||
| JP2011197150A | ||||
| JP2007522673A | ||||
| JP2005523177A |
Foreign References:
| US20090155731 | ||||
| US20090214985 | ||||
| US20110014790 | ||||
| US20110111596 |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Shinsuke Onuki
Tadahiko Ito
Shinsuke Onuki
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