Title:
半導体装置
Document Type and Number:
Japanese Patent JP5851916
Kind Code:
B2
Abstract:
Provided is a semiconductor device characterized by that first to fourth semiconductor chips are mounted on first to fourth electrodes formed by plating, respectively; the surface of the first semiconductor chip and the upper surface of a fifth electrode, the surface of the second semiconductor chip and the upper surface of the first electrode, the surface of the third semiconductor chip and the upper surface of the fourth electrode, the surface of the fourth semiconductor chip and the upper surface of the fifth electrode, and the upper surface of the second electrode and the upper surface of the third electrode are coupled to each other by first to fifth conductive members, respectively; and the back surfaces of the first to fifth electrodes are exposed from a resin molding. The invention makes it possible to reduce the size and the thickness of a semiconductor device configuring a diode bridge circuit.
Inventors:
Eiji Osugi
Application Number:
JP2012086410A
Publication Date:
February 03, 2016
Filing Date:
April 05, 2012
Export Citation:
Assignee:
Renesas Electronics Corporation
International Classes:
H01L25/07
Domestic Patent References:
| JP2003518733A | ||||
| JP2003332508A | ||||
| JP61061847U | ||||
| JP56060024A | ||||
| JP2006186018A |
Foreign References:
| WO2001033632A1 | ||||
| US20060043545 |
Attorney, Agent or Firm:
Yamato Tsutsui
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