Title:
新規な化合物半導体及びその活用
Document Type and Number:
Japanese Patent JP5852228
Kind Code:
B2
Abstract:
Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: In x M y Co 4-m-a A m Sb 12-n-z-b X n Q z , where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt, X is at least one selected from the group consisting of Si, Ga, Ge and Sn, Q is at least one selected from the group consisting of O, S, Se and Te, 0
Inventors:
Park, Chul-Hee
Kim, Tae Hoon
Kim, Tae Hoon
Application Number:
JP2014508303A
Publication Date:
February 03, 2016
Filing Date:
May 11, 2012
Export Citation:
Assignee:
LG HAUSYS,LTD.
International Classes:
H01L35/18; C22C1/04; C22C12/00; H01L31/0256; H01L35/16; H01L35/22; H01L35/34; H02N11/00
Domestic Patent References:
| JP2008500451A | ||||
| JP2007523998A |
Foreign References:
| KR1020090026664A | ||||
| WO2009093455A1 | ||||
| WO2010108912A2 | ||||
| CN101397612A |
Other References:
Jae-Yong Jung, et al,Materials Chemistry and Physics,2008年,108,p.431-434
W. Y. ZHAO et al.,Synthesis and high temperature transport properties of barium and indium double-filled skutterudites BaxInyCo4Sb12-z,Journal of Applied Physics,2007年,Volume 102, Issue 11,pp.113708
W. Y. ZHAO et al.,Synthesis and high temperature transport properties of barium and indium double-filled skutterudites BaxInyCo4Sb12-z,Journal of Applied Physics,2007年,Volume 102, Issue 11,pp.113708
Attorney, Agent or Firm:
Ikeuchi, Sato & Partners