Title:
光起電力装置およびその製造方法
Document Type and Number:
Japanese Patent JP5868290
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a photovoltaic device having excellent photoelectric conversion efficiency, in which current leakage on a substrate end face is prevented and output reduction caused by collection loss of an optical carrier produced in a substrate end peripheral region is suppressed, and a manufacturing method for the photovoltaic device.SOLUTION: A photovoltaic device has a first amorphous semiconductor thin film layer which has a conductivity type reverse to the substrate, a first transparent electrode layer, and a first collection electrode in this order on a first main surface of a crystalline semiconductor substrate, and has a second amorphous semiconductor thin film layer which has a conductivity type the same as the substrate, a second transparent electrode layer, and a second collection electrode in this order on a second main surface of the substrate. The first transparent electrode layer is formed in only an area smaller than a formation region of the first amorphous semiconductor thin film in the face direction of the substrate. The second transparent electrode layer is formed in only an area smaller than a formation region of the second amorphous semiconductor thin film in the face direction of the substrate. An impurity doping layer which has a conductivity type reverse to the substrate is formed in an area including at least an unformed region of the first transparent electrode layer in the face direction of the substrate, in the main surface.
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Inventors:
Shuichi Hiza
Tatsuro Watabiki
Tatsuro Watabiki
Application Number:
JP2012184349A
Publication Date:
February 24, 2016
Filing Date:
August 23, 2012
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L31/0747
Domestic Patent References:
| JP2004228281A | ||||
| JP201191131A | ||||
| JP200313292A |
Attorney, Agent or Firm:
Hiroaki Sakai
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