半導体検査装置および半導体検査方法 - Hitachi High-Technologies Corporation

Title:

半導体検査装置および半導体検査方法

Document Type and Number:

Japanese Patent JP5873741

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To electrically inspect an element and a wire formed on a semiconductor wafer during manufacture under an environment in which a charged particle beam is emitted.SOLUTION: A semiconductor inspection device 10 includes: a charged particle optical system device 100 for irradiating a sample wafer 110 with a charged particle beam 102; a sample stage 108 freely moving in a sample chamber 103; a prober stage 104 which is mounted with a prober 105 including a probe needle 107 and freely moves in the sample chamber 103; a rough adjustment image acquisition unit 112 for acquiring an optical image of the sample wafer 110 when a position of the prober 105 is roughly adjusted; a charged particle image acquisition unit 120 for acquiring a charged particle image on the basis of a detection signal of secondary charged particles emitted from the sample wafer 110 when the charged particle beam 102 is emitted to the sample wafer 110 while scanning the sample wafer 110 with the charged particle beam 102; a current voltage detection unit 121 for detecting a current or a voltage obtained from the probe needle 107; and a control computer 125.

Inventors:

Yasuhiko Nara

Application Number:

JP2012053810A

Publication Date:

March 01, 2016

Filing Date:

March 09, 2012

Export Citation:

Click for automatic bibliography generation Help