Title:
磁気抵抗効果素子の製造方法
Document Type and Number:
Japanese Patent JP5882502
Kind Code:
B2
Abstract:
Provided is a method for manufacturing a magnetoresistive element, including a step of forming a tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes a deposition step of depositing a metal film on top of a substrate, and an oxidation step of subjecting the metal film to an oxidation process. The oxidation step includes holding the substrate having Mg formed thereon, on a substrate holder in a processing container in which the oxidation process is performed, supplying an oxygen gas to the substrate by introducing the oxygen gas into the processing container, at a temperature at which Mg does not sublime, and heating the substrate after the introduction of the oxygen gas.
Inventors:
Kiyono Takuya
Kazumasa Nishimura
Okuyama Hiroki
Yuichi Otani
Yuta Murooka
Shimane Yumi
Kazumasa Nishimura
Okuyama Hiroki
Yuichi Otani
Yuta Murooka
Shimane Yumi
Application Number:
JP2014552881A
Publication Date:
March 09, 2016
Filing Date:
September 04, 2013
Export Citation:
Assignee:
Canon ANELVA Corporation
International Classes:
H01L43/12; H01L21/316; H01L21/8246; H01L27/105; H01L43/08
Domestic Patent References:
| JP2007138295A | 2007-06-07 | |||
| JP2002043299A | 2002-02-08 | |||
| JP2007138295A | 2007-06-07 | |||
| JP2002043299A | 2002-02-08 | |||
| JP2011023729A | 2011-02-03 | |||
| JP2011134909A | 2011-07-07 |
Foreign References:
| WO2010044134A1 | 2010-04-22 | |||
| WO2012086183A1 | 2012-06-28 | |||
| WO2011081203A1 | 2011-07-07 | |||
| WO2010044134A1 | 2010-04-22 | |||
| WO2012086183A1 | 2012-06-28 | |||
| WO2011081203A1 | 2011-07-07 | |||
| WO2010150590A1 | 2010-12-29 | |||
| WO2010008021A1 | 2010-01-21 |
Attorney, Agent or Firm:
Okabe
Koji Yoshizawa
Haruhiko Mimura
Tomoki Kubota
Yoichi Okabe
Koji Yoshizawa
Haruhiko Mimura
Tomoki Kubota
Yoichi Okabe