Title:
固体撮像装置
Document Type and Number:
Japanese Patent JP5886793
Kind Code:
B2
Abstract:
A solid-state imaging device 1A comprises a photodetecting section 20, an unnecessary carrier capture section 30, and a vertical shift register 60. The unnecessary carrier capture section 30 has carrier capture regions DA1to DAMarranged in a region between the photodetecting section 20 and the vertical shift register 60 for respective rows. Each of the carrier capture regions DA1to DAMincludes a transistor and a photodiode. The transistor has one terminal connected to the photodiode and the other terminal connected to a charge elimination line Rd. The charge elimination line Rdis short-circuited to a reference potential line GND. This realizes a solid-state imaging device which enables pixels adjacent to a dummy photodiode to have output characteristics and magnitudes of noise closer to those of the other pixels.
Inventors:
Kazuki Fujita
Ryuji Hisashima
Osamu Mori
Ryuji Hisashima
Osamu Mori
Application Number:
JP2013122910A
Publication Date:
March 16, 2016
Filing Date:
June 11, 2013
Export Citation:
Assignee:
Hamamatsu Photonics Co., Ltd.
International Classes:
H04N5/365; H01L27/146; H04N5/32
Foreign References:
| US20110032391 | ||||
| US20080218608 | ||||
| US20100193692 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Satoru Ishida
Shotaro Terasawa
Yoshiki Kuroki
Satoru Ishida
Shotaro Terasawa