Title:
Ｇａ２Ｏ３系結晶膜の成膜方法、及び結晶積層構造体
Document Type and Number:
Japanese Patent JP5892495
Kind Code:
B2
Abstract:
A method of forming a Ga 2 O3-based crystal film includes epitaxially growing a Ga2O 3 -based crystal film on a ( 001 )-oriented principal surface of a Ga 2 O 3 -based substrate at a growth teurperature of not less than 750°C. A crystal multilayer structure includes a Ga2O 3 -based substrate with a ( 001 )-oriented principal surface, and a Ga2O 3 -based crystal film formed on the principal surface of the Ga2O 3 -based substrate by epitaxial growth. The principal surface has a flatness of not more than 1 nm in an RMS value.
Inventors:
Sasaki Kohei
Masataka Higashiwaki
Masataka Higashiwaki
Application Number:
JP2013265771A
Publication Date:
March 23, 2016
Filing Date:
December 24, 2013
Export Citation:
Assignee:
TAMURA CORPORATION OF CHINA LIMITED
National Institute of Information and Communications Technology
National Institute of Information and Communications Technology
International Classes:
C30B29/16; C23C14/08
Domestic Patent References:
| JP2008303119A | ||||
| JP2009091212A |
Foreign References:
| WO2013035464A1 |
Attorney, Agent or Firm:
Tadao Hirata
Yuji Iwanaga
Endo Wako
Hiroyuki Ito
Yuji Iwanaga
Endo Wako
Hiroyuki Ito