Title:
光電変換装置及びその特性検査方法
Document Type and Number:
Japanese Patent JP5892607
Kind Code:
B2
Abstract:
A photoelectric conversion device which inhibits characteristic degradation caused by crystal defects, and an inspection method for crystal defects in photoelectric conversion devices. The photoelectric conversion device is provided with an active layer, and a deactivator contained in the active layer.
Inventors:
Akihiko Yoshikawa
Yoshihiro Ishitani
Kazuhide Kusobe
Yoshihiro Ishitani
Kazuhide Kusobe
Application Number:
JP2012504552A
Publication Date:
March 23, 2016
Filing Date:
March 14, 2011
Export Citation:
Assignee:
National University Corporation Chiba University
International Classes:
H01L33/18; H01L31/10; H01L33/32
Domestic Patent References:
| JP2007254258A | 2007-10-04 |
Other References:
JPN6011034366; 崔成伯等: '超薄膜ＩｎＮ／ＧａＮ量子井戸構造からの誘導放出' 第６９回応用物理学会学術講演会 講演予稿集 , 2008, ｐ３２２
JPN6011034368; 崔成伯等: '窒化インジウム系ナノ構造発光デバイスの技術開発' 月刊ディスプレイ Ｖｏｌ．１５ Ｎｏ．２, 20090201, ｐ１７-２６
JPN6011034370; 草部一秀等: 'ＩｎＮ系窒化物半導体超薄膜非対称量子井戸構造の新規光デバイス開発に向けて-発光素子から太陽電池への展開' 電子情報通信学会技術研究報告 Ｖｏｌ．１０９ Ｎｏ．２８９, 20091112, ｐ７９-８２
JPN6011034368; 崔成伯等: '窒化インジウム系ナノ構造発光デバイスの技術開発' 月刊ディスプレイ Ｖｏｌ．１５ Ｎｏ．２, 20090201, ｐ１７-２６
JPN6011034370; 草部一秀等: 'ＩｎＮ系窒化物半導体超薄膜非対称量子井戸構造の新規光デバイス開発に向けて-発光素子から太陽電池への展開' 電子情報通信学会技術研究報告 Ｖｏｌ．１０９ Ｎｏ．２８９, 20091112, ｐ７９-８２
Attorney, Agent or Firm:
Masayoshi Takahashi
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