Title:
ショットキー・ダイオード
Document Type and Number:
Japanese Patent JP5893003
Kind Code:
B2
Abstract:
A Schottky diode optimizes the on state resistance, the reverse leakage current, and the reverse breakdown voltage of the Schottky diode by forming an insulated control gate over a region that lies between the metal-silicon junction of the Schottky diode and the n+ cathode contact of the Schottky diode.
Inventors:
The Alan Sharfi
Jeffrey A Babcock
Jeffrey A Babcock
Application Number:
JP2013506145A
Publication Date:
March 23, 2016
Filing Date:
February 25, 2011
Export Citation:
Assignee:
NATIONAL SEMICONDUCTOR CORPORATION
International Classes:
H01L29/47; H01L29/872
Domestic Patent References:
| JP2006319096A | ||||
| JP2009064977A | ||||
| JP2005209710A |
Foreign References:
| GB2451116A | ||||
| US20060125019 | ||||
| US20090283841 |
Attorney, Agent or Firm:
Kyozo Katayose