Title:
単結晶窒化物系半導体基板及びこれを用いた高品質の窒化物系発光素子製造方法
Document Type and Number:
Japanese Patent JP5899160
Kind Code:
B2
Abstract:
A nitride-based light emitting device is manufactured by using a single-crystal nitride-based semiconductor substrate. A seed material layer is deposited on a first substrate where organic residues including a natural oxide layer are removed from an upper surface of the first substrate. A multifunctional substrate is grown from the seed material layer. The single-crystal nitride-based semiconductor layer including a nitride-based buffer layer is formed on the multifunctional substrate. The seed material layer primarily assists the growth of the multifunctional substrate, which is essentially required for the growth of the single-crystal nitride-based semiconductor substrate. The multifunctional substrate is prepared in the form of a single-crystal layer or a poly-crystal layer having a hexagonal crystalline structure. The light emitting device employing the single-crystal nitride-based semiconductor substrate is used as a next-generation white light source having high capacity, large area, high brightness and high performance.
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Inventors:
Song Shun noon
Application Number:
JP2013124089A
Publication Date:
April 06, 2016
Filing Date:
June 12, 2013
Export Citation:
Assignee:
Samsung Display Co.,Ltd.
International Classes:
H01L33/12; H01L33/32
Domestic Patent References:
| JP2002217452A | ||||
| JP2000091637A | ||||
| JP2001192300A | ||||
| JP2005072594A | ||||
| JP7202265A | ||||
| JP11243229A |
Attorney, Agent or Firm:
Takahashi Hayashi & Partners