Title:
A manufacturing method of a single crystal copper oxide (I) nano line array using low-temperature electrochemistry growth
Document Type and Number:
Japanese Patent JP5942115
Kind Code:
B2
Abstract:
There are provided a monocrystalline copper oxide (I) nanowire array manufacturing method using low-temperature electrochemical growth, and more particularly, to a manufacturing method allowing easy vapor deposition at low temperatures and also a monocrystalline copper oxide (I) nanowire array manufacturing method using low-temperature electrochemical growth which retains characteristics such as large-area growth, high-crystallinity nanowire, uniform radial distribution, easy length, radius adjustment, and the like. A monocrystalline copper oxide (I) nanowire array manufacturing method of the present invention includes a step of manufacturing a nanopore alumina layer (anodized alumina (AAO)) from a high-purity aluminum (Al) sheet by using a two-step anodic oxidation method; and a step of manufacturing a monocrystalline copper oxide (I) nanowire array by using the nanopore alumina layer as a nanopore molding flask by means of a low-temperature electrochemical growth method.
Inventors:
Park Bejo
Kang Sung Eun
Kang Sung Eun
Application Number:
JP2013548350A
Publication Date:
June 29, 2016
Filing Date:
January 04, 2012
Export Citation:
Assignee:
Kong Kuk University Industrial Corporation Corporation
International Classes:
C25D1/00; B82Y30/00; B82Y40/00; C25D1/10; C25D9/08; C25D11/04
Domestic Patent References:
| JP2007224364A | ||||
| JP2010256636A |
Other References:
Electrochemical deposition and characterization of Cu2O nanowaires,Appl.Phys.A81,685-689,2005年 4月20日
Template-assisted electrochemical synthesis of cuprous oxide nanowires,Materials Letters 63 (2009) 397-399,2009年
Template-assisted electrochemical synthesis of cuprous oxide nanowires,Materials Letters 63 (2009) 397-399,2009年
Attorney, Agent or Firm:
Ichiro Kudo