Title:
半導体装置
Document Type and Number:
Japanese Patent JP5959255
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device having large electrostatic capacitance.SOLUTION: A semiconductor device comprises: a semiconductor element 1; a die pad 5; an adhesive 10 for adhering the semiconductor element 1 to the die pad 5; a power source lead 2; a signal lead 3; a ground lead 4; a bonding wire 6 for electrical connection between the semiconductor element 1 and the outside; a dielectric body 7 sandwiched between the power source lead 2 and the die pad 5 connected to the ground lead 4 and between the signal lead 3 and the die pad 5 connected to the ground lead 4; and an encapsulation resin 8 which encapsulates the semiconductor element 1, the die pad 5, the adhesive 10, the power source lead 2, the signal lead 3, the ground lead 4, the bonding wire 6 and the dielectric body 7.
Inventors:
Koji Noguchi
Seimei Kadoi
Seimei Kadoi
Application Number:
JP2012065989A
Publication Date:
August 02, 2016
Filing Date:
March 22, 2012
Export Citation:
Assignee:
SII Semiconductor Corporation
International Classes:
H01L25/00; H01L23/50
Domestic Patent References:
| JP10093002A | ||||
| JP4188759A | ||||
| JP63132459A | ||||
| JP11346008A | ||||
| JP2008028281A | ||||
| JP2006013001A |
Foreign References:
| US6054754 |