Title:
スパッタリングターゲット
Document Type and Number:
Japanese Patent JP5960251
Kind Code:
B2
Abstract:
Provided is a sputtering target composed of a metal matrix phase containing Co and a phase containing 6 to 25 mol % of an oxide that is dispersed in the form of grains (hereinafter, referred to as “oxide phase”); and the sputtering target is characterized in that the integral width of the highest peak among single peaks of XRD is 0.7 or less. A non-magnetic material grain-dispersed sputtering target is provided, which does not undergo the formation of initial particles during sputtering to thereby shorten a burn-in time and which enables the generation of steady discharge during sputtering.
Inventors:
Yuki Ikeda
Application Number:
JP2014512965A
Publication Date:
August 02, 2016
Filing Date:
September 13, 2013
Export Citation:
Assignee:
JX Nippon Mining & Metals Co., Ltd.
International Classes:
C23C14/34; G11B5/65; G11B5/851
Domestic Patent References:
| JP2012132036A | ||||
| JP1263269A | ||||
| JP2003049264A |
Foreign References:
| WO2012011204A1 | ||||
| WO2009099121A1 | ||||
| WO2011077933A1 | ||||
| WO2007040014A1 |
Attorney, Agent or Firm:
Isamu Ogoshi
Ikki Kogoshi
Ikki Kogoshi
Previous Patent: コンデンサ用非晶性ポリエーテルイミドフィルム、その製造方法およびそ...
Next Patent: ELECTROCHEMICAL DEVICE FOR MONITORING AND/OR MEASURING ONE COMPONENT OF GAS
Next Patent: ELECTROCHEMICAL DEVICE FOR MONITORING AND/OR MEASURING ONE COMPONENT OF GAS