Title:
半導体装置
Document Type and Number:
Japanese Patent JP5960302
Kind Code:
B2
Abstract:
It is an object to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limitation on the number of writings. A semiconductor device includes a second transistor and a capacitor provided over a first transistor. A source electrode of the second transistor which is in contact with a gate electrode of the first transistor is formed using a material having etching selectivity with respect to the gate electrode. By forming the source electrode of the second transistor using a material having etching selectivity with respect to the gate electrode of the first transistor, a margin in layout can be reduced, so that the degree of integration of the semiconductor device can be increased.
Inventors:
Atsushi Isobe
Yoshida Ieda
Kiyoshi Kato
Hiroto Yakubo
Courage
Yoshida Ieda
Kiyoshi Kato
Hiroto Yakubo
Courage
Application Number:
JP2015011082A
Publication Date:
August 02, 2016
Filing Date:
January 23, 2015
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/8242; C23C14/34; G11C11/405; H01L21/02; H01L21/265; H01L21/477; H01L21/768; H01L21/8234; H01L27/088; H01L27/10; H01L27/108; H01L27/12; H01L29/786
Domestic Patent References:
| JP2001053164A | ||||
| JP2007103918A | ||||
| JP63268184A | ||||
| JP2002319682A |
Foreign References:
| US6314017 |