Title:
半導体装置
Document Type and Number:
Japanese Patent JP5960445
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device which can ensure a sufficient and effective channel width and reduce an element area.SOLUTION: A semiconductor device 1 comprises a gate structure 16 including a gate electrode, a drain region 20, a source region 21 and a substrate contact region 22. An end of the source region 21 on the substrate contact region 22 side includes concave parts 21C, ..., 21C arranged in an extension direction of the gate structure 16. Another end of the source region on the gate structure 16 side is separately arranged from the concave parts 21C, ..., 21C and linearly and continuously formed. The substrate contact region 22 includes opposite regions 22P, ..., 22P arranged in the extension direction of the gate structure 16, and the opposite regions 22P, ..., 22P are arranged in the concave parts 21C, ..., 21C, respectively.
Inventors:
Toru Mori
Application Number:
JP2012036898A
Publication Date:
August 02, 2016
Filing Date:
February 23, 2012
Export Citation:
Assignee:
LAPIS Semiconductor Co., Ltd.
International Classes:
H01L21/336; H01L29/78
Domestic Patent References:
| JP2011091231A | ||||
| JP2005093696A | ||||
| JP2009502041A | ||||
| JP10150193A |
Foreign References:
| WO2011161748A1 |
Attorney, Agent or Firm:
Minoru Maeda
Youichi Yamagata
Masahiko Shinohara
Youichi Yamagata
Masahiko Shinohara