Title:
半導体装置
Document Type and Number:
Japanese Patent JP5961404
Kind Code:
B2
Abstract:
A semiconductor device of the present invention includes a gate electrode which includes a pair of first protrusions and a second protrusion provided between the pair of first protrusions; a gate insulating film covering the gate electrode; a semiconductor film which is in contact with the gate insulating film and overlaps with the pair of first protrusions and the second protrusion; and a pair of electrodes which is in contact with the semiconductor film and overlaps with the pair of first protrusions. The side edges of the semiconductor film are on the outer sides than the top surfaces of the pair of first protrusions in the direction of the channel width of the semiconductor film. The side edges of the pair of electrodes are on the outer sides than the top surfaces of the pair of first protrusions in the direction of the channel width of the semiconductor film.
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Inventors:
Yuta Endo
Application Number:
JP2012042660A
Publication Date:
August 02, 2016
Filing Date:
February 29, 2012
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786
Domestic Patent References:
| JP2006245371A | ||||
| JP2010239131A | ||||
| JP2007134546A | ||||
| JP2010177466A | ||||
| JP2009152487A | ||||
| JP5110098A |