Title:
４ｈ−ＳｉＣ絶縁ゲートバイポーラトランジスタおよびその製造方法
Document Type and Number:
Japanese Patent JP6268298
Kind Code:
B2
Inventors:
Hiroyuki Yoshimoto
Naoki Watanabe
Morizuka Tsubasa
Fujisaki Koji
Naoki Watanabe
Morizuka Tsubasa
Fujisaki Koji
Application Number:
JP2016545120A
Publication Date:
January 24, 2018
Filing Date:
August 26, 2014
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
H01L29/12; H01L21/28; H01L21/336; H01L29/417; H01L29/739; H01L29/78; H02M7/48
Domestic Patent References:
| JP2013058603A | ||||
| JP2013058602A | ||||
| JP10256529A | ||||
| JP2012099630A | ||||
| JP2010205758A |
Foreign References:
| WO2009104299A1 |
Attorney, Agent or Firm:
Aoritsu patent business corporation